Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films
Wei-Xiong Wu, Yang Feng, Yun-He Bai, Yu-Ying Jiang, Zong-Wei Gao, Yuan-Zhao Li, Jian-Li Luan, Heng-An Zhou, Wan-Jun Jiang, Xiao Feng, Jin-Song Zhang, Hao Zhang, Ke He, Xu-Cun Ma, Qi-Kun Xue, Ya-Yu Wang
arXiv:2103.05215 · DOI 10.1088/0256-307X/38/3/037402 · 2021-03-09
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Abstract
We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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