Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe$_2$

T. T. Han; L. Chen; C. Cai; Z. G. Wang; Y. D. Wang; Z. M. Xin; Y. Zhang

doi:10.1103/PhysRevLett.126.106602

← Back to search

Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe$_2$

T. T. Han, L. Chen, C. Cai, Z. G. Wang, Y. D. Wang, Z. M. Xin, Y. Zhang

arXiv:2103.07596 · DOI 10.1103/PhysRevLett.126.106602 · 2021-03-13 · Physical review letters

T3experimental6 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

Artificially created two-dimensional (2D) interfaces or structures are ideal for seeking exotic phase transitions due to their highly tunable carrier density and interfacially enhanced many-body interactions. Here, we report the discovery of a metal-insulator transition (MIT) and an emergent gapped phase in the metal-semiconductor interface that is created in 2H-MoTe$_2$ via alkali-metal deposition. Using angle-resolved photoemission spectroscopy, we found that the electron-phonon coupling is strong at the interface as characterized by a clear observation of replica shake-off bands. Such strong electron-phonon coupling interplays with disorder scattering, leading to an Anderson localization of polarons which could explain the MIT. The domelike emergent gapped phase could then be attributed to a polaron extended state or phonon-mediated superconductivity. Our results demonstrate the capability of alkali-metal deposition as an effective method to enhance the many-body interactions in 2D semiconductors. The surface-doped 2H-MoTe$_2$ is a promising candidate for realizing polaronic insulator and high-$T_c$ superconductivity.