Control of band structure of FeSe single crystals via biaxial strain
M. Nakajima, Y. Ohata, S. Tajima
arXiv:2103.09701 · DOI 10.1103/PhysRevMaterials.5.044801 · 2021-03-17
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Abstract
We performed systematic transport measurements on FeSe single crystals with applying in-plane biaxial strain $\varepsilon$ ranging from -0.96% to 0.23%. Biaxial strain was introduced by firmly gluing samples to various substrate materials with different thermal expansion. With increasing $\varepsilon$, structural and superconducting transition temperatures monotonically increased and decreased, respectively. We analyzed magneto-transport results using a compensated three-carrier model. The evaluated densities of hole and electron carriers systematically changed with strain. This indicates that we succeeded in controlling the band structure of single-crystalline FeSe.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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