Ge thin-films with tantalum diffusion-barriers for use in Nb-based superconductor technology
C. Kopas, S. Zhang, J. Gonzales, D. R. Queen, B. Wagner, R. W. Carpenter, N. Newman
arXiv:2104.12580 · 2021-04-26
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Abstract
Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In Ge/Nb structures deposited at 400 °C, we observe intermixing over as much as 20 nm. The addition of a 10 nm Ta diffusion barrier layer reduces the superconductor/dielectric intermixing to less than 5 nm and enhances the structural properties of deposited a-Ge layers based on Raman spectroscopy. Additionally, superconducting microwave resonators fabricated at room-temperature on crystalline Ge substrates with a Ta barrier layer show marked improvement in total and power-dependent two-level system microwave losses.
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