Spectroscopy of $NbSe_2$ using Energy-Tunable Defect-Embedded Quantum Dots

T. R. Devidas; Itai Keren; Hadar Steinberg

doi:10.1021/acs.nanolett.1c02177

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Spectroscopy of $NbSe_2$ using Energy-Tunable Defect-Embedded Quantum Dots

T. R. Devidas, Itai Keren, Hadar Steinberg

arXiv:2106.03047 · DOI 10.1021/acs.nanolett.1c02177 · 2021-06-06 · Nano letters

T1experimental22 citations

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Abstract

Quantum dots have sharply defined energy levels, which can be used for high resolution energy spectroscopy when integrated in tunneling circuitry. Here we report dot-assisted spectroscopy measurements of the superconductor $NbSe_2$, using a van der Waals device consisting of a vertical stack of $graphene-MoS_2-NbSe_2$. The $MoS_2$ tunnel barriers host naturally occurring defects which function as quantum dots, allowing transport via resonant tunneling. The dot energies are tuned by an electric field exerted by a back-gate, which penetrates the graphene source electrode. Scanning the dot potential across the superconductor Fermi energy, we reproduce the $NbSe_2$ density of states which exhibits a well-resolved two-gap spectrum. Surprisingly, we find that the dot-assisted current is dominated by the lower energy feature of the two $NbSe_2$ gaps, possibly due to a selection rule which favors coupling between the dots and the orbitals which exhibit this gap.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	—