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Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors

Federico Paolucci, Francesco Crisà, Giorgio De Simoni, Lennart Bours, Claudio Puglia, Elia Strambini, Stefano Roddaro, Francesco Giazotto

arXiv:2107.00935 · DOI 10.1021/acs.nanolett.1c03481 · 2021-07-02 · Nano letters

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Abstract

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to 45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.

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FormulaReported Tc (K)Pressure (GPa)Type
Nb

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7.3Pressure not reportedzero_resistance
Nb

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7.6Pressure not reportedzero_resistance

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