Gate-tunability of the superconducting state at the $EuO/KTaO_3 (111)$ interface
Weiliang Qiao, Yang Ma, Jiaojie Yan, Wenyu Xing, Yunyan Yao, Ranran Cai, Boning Li, Richen Xiong, X. C. Xie, Xi Lin, Wei Han
arXiv:2111.06081 · DOI 10.1103/PhysRevB.104.184505 · 2021-11-11 · Physical Review B
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Abstract
The recent discovery of superconducting interfaces in the $KTaO_3 (111)$-based heterostructures is intriguing, since a much higher superconducting critical temperature (TC ~ 2 K) is achieved compared to that in the $SrTiO_3$ heterostructures (~ 300 mK). In this paper, we report the superconducting properties of $EuO/KTaO_3 (111)$ interface as a function of the interface carrier density ($n_s$). The maximum T_C is observed to be ~ 2 K at $n_s$ ~ $1\times10^{14}$ cm-2. In addition, we show that the critical current density and the upper critical magnetic field can be effectively tuned by the back gate voltage. Interestingly, the gate dependence of the upper critical magnetic field exhibits a trend opposite to that of TC in the underdoped region, suggesting a relatively larger Cooper pairing potential.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| KTaO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2 | Pressure not reported | unknown |
| SrTiO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.3 | Pressure not reported | unknown |
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