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Superconducting Phase of $\mathrm{Ti_xO_y}$ Thin Films Grown by Molecular Beam Epitaxy

Yasemin Ozbek, Cooper Brooks, Athby Al-Tawhid, Xuanyi Zhang, Vladmir Stoica, Zhan Zhang, Divine P. Kumah

arXiv:2203.01405 · DOI 10.1103/PhysRevMaterials.6.064805 · 2022-03-02

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Abstract

We investigate the complex relationship between the growth conditions and the structural and transport properties of $\mathrm{Ti_xO_y}$ thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure, $P_{Ox}$, for films grown on (0001)-$\mathrm{Al_2 O_3}$ substrates at 850$^{\circ}$ C. A cubic $c-\mathrm{TiO_{1\pmδ}}$ buffer layer is formed for low O/Ti ratios while a corundum cr-$\mathrm{Ti_2 O_3}$ layer is formed under higher oxidizing conditions. Metallicity is observed for c-$\mathrm{TiO_{1-δ}}$ buffer layers. The superconducting $\mathrm{γ-Ti_3 O_5}$ Magnéli phase is found to nucleate on a c-$\mathrm{TiO_{1-δ}}$ buffer for intermediate $P_{Ox}$ conditions and an insulator-superconducting transition is observed at 4.5 K (T$_C^{onset}=6 K$) for 85 nm thick films. Strain relaxation of the $\mathrm{γ-Ti_3 O_5}$ occurs with increasing film thickness and correlates with a thickness-dependent increase in T$_C$ observed for $\mathrm{Ti_xO_y}$ thin films.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
γ-Ti3O5

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6Pressure not reportedonset
γ-Ti3O5

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4.5Pressure not reportedunknown
γ-Ti3O5

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7Pressure not reportedunknown
TiO1±δ

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7.4Pressure not reportedunknown
TiO1±δ

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5.5Pressure not reportedunknown
γ-Ti3O5

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7.1Pressure not reportedunknown
Ti4O7

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3Pressure not reportedunknown
TiO1±δ

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3.7Pressure not reportedunknown

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