Proximity-Induced Superconductivity in Epitaxial Topological Insulator/Graphene/Gallium Heterostructures
Cequn Li, Yi-Fan Zhao, Alexander Vera, Omri Lesser, Hemian Yi, Shalini Kumari, Zijie Yan, Chengye Dong, Timothy Bowen, Ke Wang, Haiying Wang, Jessica L. Thompson, Kenji Watanabe, Takashi Taniguchi, Danielle Reifsnyder Hickey, Yuval Oreg, Joshua A. Robinson, Cui-Zu Chang, Jun Zhu
arXiv:2205.02806 · DOI 10.1038/s41563-023-01478-4 · 2022-05-05
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Abstract
The introduction of superconductivity to the Dirac surface states of a topological insulator leads to a topological superconductor, which may support topological quantum computing through Majorana zero modes. The development of a scalable material platform is key to the realization of topological quantum computing. Here we report on the growth and properties of high-quality (Bi,Sb)2Te3/graphene/gallium heterostructures. Our synthetic approach enables atomically sharp layers at both hetero-interfaces, which in turn promotes proximity-induced superconductivity that originates in the gallium film. A lithography-free, van der Waals tunnel junction is developed to perform transport tunneling spectroscopy. We find a robust, proximity-induced superconducting gap formed in the Dirac surface states in 5-10 quintuple-layer (Bi,Sb)2Te3/graphene/gallium heterostructures. The presence of a single Abrikosov vortex, where the Majorana zero modes are expected to reside, manifests in discrete conductance changes. The present material platform opens up opportunities for understanding and harnessing the application potential of topological superconductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ga Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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