K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering
Dongyi Qin, Kazumasa Iida, Zimeng Guo, Chao Wang, Hikaru Saito, Satoshi Hata, Michio Naito, Akiyasu Yamamoto
arXiv:2207.06629 · DOI 10.1088/1361-6668/ac8025 · 2022-07-14 · Superconductor Science and Technology
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Abstract
Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm$^\text{2}$ at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ba1-xKxFe2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39.8 | Pressure not reported | unknown |
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