Single photon detection performance of highly disordered NbTiN thin films
Ruoyan Ma, Rui Shu, Xingyu Zhang, Aobo Yu, Huang Jia, You Xiao, Huiqin Yu, Xiaoyu Liu, Hao Li, Per Eklund, Xiaofu Zhang, Lixing You
arXiv:2210.15215 · DOI 10.1088/2399-6528/acd747 · 2022-10-27 · Journal of Physics Communications
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Abstract
We experimentally investigated the detection performance of highly disordered NbxTi1-xN based superconducting nanowire single photon detectors (SNSPDs). The dependence on the composition of the transition temperature Tc for NbxTi1-xN films show a dome-like behavior on the Nb content, with a maximal Tc at xNb~0.65 , and the Nb0.65Ti0.35N films also combine relatively large sheet resistance and intermediate residual resistivity ratio. Moreover, 60-nm-wide and 7-nm-thick Nb0.65Ti0.35N nanowires show a switching current as high as 14.5 uA, and saturated intrinsic detection efficiency with a plateau of more than 2 uA at 2.4 K. Finally, the corresponding SNSPDs on an alternative SiO2/Ta2O5 dielectric mirror showed a system detection efficiency of approximately 92% for 1550 nm photons, and the timing jitter is around 26 ps. Our results demonstrate that the highly disordered NbxTi1-xN films are promising for fabricating SNSPDs for near- and middle-infrared single photons with high detection efficiency and low timing jitter.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb0.65Ti0.35N Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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