InAs/MoRe hybrid semiconductor/superconductor nanowire devices

Bilal Kousar; Damon J. Carrad; Lukas Stampfer; Peter Krogstrup; Jesper Nygård; Thomas S. Jespersen

doi:10.1021/acs.nanolett.2c02532

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InAs/MoRe hybrid semiconductor/superconductor nanowire devices

Bilal Kousar, Damon J. Carrad, Lukas Stampfer, Peter Krogstrup, Jesper Nygård, Thomas S. Jespersen

arXiv:2211.02454 · DOI 10.1021/acs.nanolett.2c02532 · 2022-11-04 · Nano letters

T3experimental10 citations

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Abstract

Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact to molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures ~10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ~10 K, and MoRe based Josephson devices exhibit supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature, and observe gap softening at finite magnetic field. These may be common features for hybrids based on large gap, type-II superconductors. The results encourage further development of MoRe-based hybrids.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
MoRe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	10	Pressure not reported	unknown