Unconventional superconductivity and quantum criticality in SmN

W. F. Holmes-Hewett; K. Van Koughnet; J. D. Miller; B. J. Ruck; H. J. Trodahl; R. G. Buckley

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Unconventional superconductivity and quantum criticality in SmN

W. F. Holmes-Hewett, K. Van Koughnet, J. D. Miller, B. J. Ruck, H. J. Trodahl, R. G. Buckley

arXiv:2302.06151 · 2023-02-13

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Abstract

Nitrogen vacancy doped SmN$_{1-δ}$ is a semiconductor which lies in the intermediary between insulating-ferromagnetic SmN and metallic-anti-ferromagnetic Sm. The dopant electrons resulting from nitrogen vacancies have recently been predicted to lie in a band precipitated by a majority-spin 4$f$ level on the six Sm ions neighbouring each nitrogen vacancy, an in-gap state $\sim$1 eV below the 4$f$ states in stoichiometric SmN. Optical data reported here corroborate the prediction along with an extended computational study. Electrical transport measurements show the transition from an insulating to metallic state with a hopping type conductivity in dilutely doped films. We provide strong evidence that electron transport is mediated by a dispersion-less majority spin defect band implying triplet type superconductivity, the location of which in the SmN-Sm phase diagram suggests the location of a quantum critical point.