Characterization of Asymmetric Gap-Engineered Josephson Junctions and 3D Transmon Qubits

Zach Steffen; S. K. Dutta; Haozhi Wang; Kungang Li; Yizhou Huang; Yi-Hsiang Huang; Advait Mathur; F. C. Wellstood; B. S. Palmer

doi:10.1109/TASC.2023.3247987

Characterization of Asymmetric Gap-Engineered Josephson Junctions and 3D Transmon Qubits

Zach Steffen, S. K. Dutta, Haozhi Wang, Kungang Li, Yizhou Huang, Yi-Hsiang Huang, Advait Mathur, F. C. Wellstood, B. S. Palmer

arXiv:2302.12280 · DOI 10.1109/TASC.2023.3247987 · 2023-02-23 · IEEE Transactions on Applied Superconductivity

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Abstract

We have fabricated and characterized asymmetric gap-engineered junctions and transmon devices. To create Josephson junctions with asymmetric gaps, Ti was used to proximitize and lower the superconducting gap of the Al counter-electrode. DC IV measurements of these small, proximitized Josephson junctions show a reduced gap and larger excess current for voltage biases below the superconducting gap when compared to standard Al/AlOx/Al junctions. The energy relaxation time constant for an Al/AlOx/Al/Ti 3D transmon was T1 = 1 μs, over two orders of magnitude shorter than the measured T1 = 134 μs of a standard Al/AlOx/Al 3D transmon. Intentionally adding disorder between the Al and Ti layers reduces the proximity effect and subgap current while increasing the relaxation time to T1 = 32 μs.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown