Superconductivity in hyperdoped Ge by molecular beam epitaxy

Patrick J. Strohbeen; Aurelia M. Brook; Wendy L. Sarney; Javad Shabani

doi:10.1063/5.0157509

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Superconductivity in hyperdoped Ge by molecular beam epitaxy

Patrick J. Strohbeen, Aurelia M. Brook, Wendy L. Sarney, Javad Shabani

arXiv:2305.04610 · DOI 10.1063/5.0157509 · 2023-05-08 · AIP Advances

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Abstract

Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion implantation. The thin film growths would be advantageous allowing homoepitaxy of doped and undoped Ge films opening possibilities for vertical Josephson junctions. Here, we present our studies on the growth of one layer of hyperdoped superconducting germanium thin film via molecular beam epitaxy. We observe a fragile superconducting phase which is extremely sensitive to processing conditions and can easily phase-segregate, forming a percolated network of pure gallium metal. By suppressing phase segregation through temperature control we find a superconducting phase that is unique and appears coherent to the underlying Ge substrate.