Electronic-grade epitaxial (111) KTaO3 heterostructures
Kim, Jieun, Yu, Muqing, Lee, Jung-Woo, Shang, Shun-Li, Kim, Gi-Yeop, Pal, Pratap, Seo, Jinsol, Campbell, Neil, Eom, Kitae, Ramachandran, Ranjani, Rzchowski, Mark S., Oh, Sang Ho, Choi, Si-Young, Liu, Zi-Kui, Levy, Jeremy, Eom, Chang-Beom
arXiv:2308.13180 · 2023-08-28
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Abstract
KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| KTaO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| KTaO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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