Hard superconducting gap in PbTe nanowires
Yichun Gao, Wenyu Song, Shuai Yang, Zehao Yu, Ruidong Li, Wentao Miao, Yuhao Wang, Fangting Chen, Zuhan Geng, Lining Yang, Zezhou Xia, Xiao Feng, Yunyi Zang, Lin Li, Runan Shang, Qi-Kun Xue, Ke He, Hao Zhang
arXiv:2309.01355 · DOI 10.1088/0256-307X/41/3/038502 · 2023-09-04 · Chinese Physics Letters
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Abstract
Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of the induced superconducting gap. A hard gap, evident as vanishing subgap conductance in tunneling spectroscopy, is both necessary and desired. Previously, a hard gap has been achieved and extensively studied in III-V semiconductor nanowires (InAs and InSb). In this study, we present the observation of a hard superconducting gap in PbTe nanowires coupled to a superconductor Pb. The gap size ($Δ$) is $\sim$ 1 meV (maximally 1.3 meV in one device). Additionally, subgap Andreev bound states can also be created and controlled through gate tuning. Tuning a device into the open regime can reveal Andreev enhancement of the subgap conductance, suggesting a remarkable transparent superconductor-semiconductor interface, with a transparency of $\sim$ 0.96. These results pave the way for diverse superconducting quantum devices based on PbTe nanowires.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| PbTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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