Atomic-scale mechanism of enhanced electron-phonon coupling at the interface of MgB$_2$ thin film

Zhang, Xiaowen; Xu, Tiequan; Shi, Ruochen; Han, Bo; Liu, Fachen; Liu, Zhetong; Gao, Xiaoyue; Du, Jinlong; Wang, Yue; Gao, Peng

Atomic-scale mechanism of enhanced electron-phonon coupling at the interface of MgB$_2$ thin film

Zhang, Xiaowen, Xu, Tiequan, Shi, Ruochen, Han, Bo, Liu, Fachen, Liu, Zhetong, Gao, Xiaoyue, Du, Jinlong, Wang, Yue, Gao, Peng

arXiv:2309.16917 · 2023-10-02

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Abstract

In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show MgB$_2$-E2g mode splitting and softening near the MgB$_2$/MgO interface. Orbital-resolved core-level EELS link the phonon softening to in-plane boron-atom electron states' changes. Ab initio calculations confirm this softening enhances electron-phonon coupling at the interface. Our findings highlight interface engineering's potential for superconductivity enhancement.