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Local insulator-to-superconductor transition in amorphous InO$_x$ films modulated by e-beam irradiation

Iago F. Llovo, Julien Delahaye

arXiv:2405.02276 · DOI 10.1088/1361-6668/ae0dbf · 2024-05-03 · Superconductor Science and Technology

T1experimental

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Abstract

We present a novel method enabling precise post-fabrication modulation of the electrical resistance in micrometer-scale regions of amorphous indium oxide (a-InO$_x$) films. By subjecting initially insulating films to an electron beam at room temperature, we demonstrate that the exposed region of the films becomes superconducting. The resultant superconducting transition temperature ($T_c$) is adjustable up to 2.8 K by changing the electron dose and accelerating voltage. This technique offers a compelling alternative to traditional a-InO$_x$ annealing methods for both fundamental investigations and practical applications. Moreover, it empowers independent adjustment of electrical properties across initially identical a-InO$_x$ samples on the same substrate, facilitating the creation of superconducting microstructures with precise $T_c$ control at the micrometer scale. Some possible mechanisms for the observed resistance modifications are discussed.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
InOx

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2.85Pressure not reportedunknown
InOx

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2.65Pressure not reportedunknown
InOx

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2.55Pressure not reportedunknown
InOx

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

1.91Pressure not reportedunknown
InOx

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

1.96Pressure not reportedunknown
InOx

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1.4Pressure not reportedunknown
InOx

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2.4Pressure not reportedunknown
InOx

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.4Pressure not reportedunknown

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