Momentum-resolved electronic structures and strong electronic correlations in graphene-like nitride superconductors
Jiachang Bi, Yu Lin, Qinghua Zhang, Zhanfeng Liu, Ziyun Zhang, Ruyi Zhang, Xiong Yao, Guoxin Chen, Haigang Liu, Yaobo Huang, Yuanhe Sun, Hui Zhang, Zhe Sun, Shaozhu Xiao, Yanwei Cao
arXiv:2405.18150 · DOI 10.1021/acs.nanolett.4c01704 · 2024-05-28 · Nano letters
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Abstract
Although transition-metal nitrides have been widely applied for several decades, experimental investigations of their high-resolution electronic band structures are rare due to the lack of high-quality single-crystalline samples. Here, we report on the first momentum-resolved electronic band structures of titanium nitride (TiN) films, a remarkable nitride superconductor. The measurements of crystal structures and electrical transport properties confirmed the high quality of these films. More importantly, with a combination of high-resolution angle-resolved photoelectron spectroscopy and the first-principles calculations, the extracted Coulomb interaction strength of TiN films can be as large as 8.5 eV, whereas resonant photoemission spectroscopy yields a value of 6.26 eV. These large values of Coulomb interaction strength indicate that superconducting TiN is a strongly correlated system. Our results uncover the unexpected electronic correlations in transition-metal nitrides, potentially providing a perspective not only to understand their emergent quantum states but also to develop their applications in quantum devices.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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