Demonstration of 0-pi transition in Josephson junctions containing unbalanced synthetic antiferromagnets

D. Korucu; Reza Loloee; Norman O. Birge

doi:10.1063/5.0215364

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Demonstration of 0-pi transition in Josephson junctions containing unbalanced synthetic antiferromagnets

D. Korucu, Reza Loloee, Norman O. Birge

arXiv:2405.20922 · DOI 10.1063/5.0215364 · 2024-05-31 · Applied Physics Letters

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Abstract

Josephson junctions containing ferromagnetic (F) materials have been the subject of intense study over the past two decades. The ground state of such junctions oscillates between 0 and pi as the thickness of the ferromagnetic layer increases. For some applications, it might be beneficial to replace a very thin F layer with an unbalanced synthetic antiferromagnet (SAF) consisting of two F layers of different thicknesses whose magnetizations are coupled antiparallel to each other. According to theory, such a system should behave similarly to a single F layer whose thickness is equal to the difference of the two F-layer thicknesses in the SAF. We test that theoretical prediction with Josephson junctions containing unbalanced Ni/Ru/Ni SAFs, keeping the thickness of one layer fixed at 2.0 nm and varying the thickness of the other layer between 2.0 and 5.0 nm. We observe the first 0-pi transition at a thickness difference of 0.86 nm, which closely matches the position of the transition observed previously using single Ni layers.