Bound states in doped charge transfer insulators

Pengfei Li; Yang Shen; Mingpu Qin; Kun Jiang; Jiangping Hu; Tao Xiang

doi:10.1038/s41467-026-75299-9

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Bound states in doped charge transfer insulators

Pengfei Li, Yang Shen, Mingpu Qin, Kun Jiang, Jiangping Hu, Tao Xiang

arXiv:2408.00576 · DOI 10.1038/s41467-026-75299-9 · 2026-08-17

T33 citations

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Abstract

Understanding the physics of doped charge transfer insulators is the most important problem in high-temperature superconductivity. In this work, we show that an in-gap bound state emerges from the localized hole of the doped charge transfer insulator. We propose an approximate ground state wavefunction based on one localized Zhang-Rice singlet and the Neel state. By calculating the excitation states with one hole added and removed from this ground state, we successfully identify the existence of bound states inside the charge transfer gap. This feature is further confirmed by a Lanczos calculation based on matrix product states (MPS) for a system of $4\times4$ CuO$_2$ unit cells. How these bound states evolve into metallic states is further discussed. Our findings identify the key component of recent STM results on lightly doped Ca$_2$CuO$_2$Cl$_2$ and provide a new understanding of hole-doped charge transfer insulators.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Ca2CuO2Cl2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown