In-situ scanning gate imaging of individual two-level material defects in live superconducting quantum circuits

M. Hegedüs; R. Banerjee; A. Hutcheson; T. Barker; S. Mahashabde; A. V. Danilov; S. E. Kubatkin; V. Antonov; S. E. de Graaf

doi:10.1126/sciadv.adt8586

In-situ scanning gate imaging of individual two-level material defects in live superconducting quantum circuits

M. Hegedüs, R. Banerjee, A. Hutcheson, T. Barker, S. Mahashabde, A. V. Danilov, S. E. Kubatkin, V. Antonov, S. E. de Graaf

arXiv:2408.16660 · DOI 10.1126/sciadv.adt8586 · 2024-08-29 · Science Advances

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Abstract

The low temperature physics of structurally amorphous materials is governed by two-level system defects (TLS), the exact origin and nature of which remain elusive despite decades of study. Recent advances towards realising stable high-coherence platforms for quantum computing has increased the importance of studying TLS in solid-state quantum circuits, as they are a persistent source of decoherence and instability. Here we perform scanning gate microscopy on a live superconducting quantum circuit at millikelvin temperatures to locate individual TLS. Our method directly reveals the microscopic nature of TLS and is also capable of deducing the three dimensional orientation of individual TLS electric dipole moments. Such insights, when combined with structural information of the underlying materials, can help unravel the detailed microscopic nature and chemical origin of TLS, directing strategies for their eventual mitigation.