Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions

Bianca Turini; Sedighe Salimian; Matteo Carrega; Federico Paolucci; Valentina Zannier; Lucia Sorba; Stefan Heun

doi:10.1002/pssb.202400534

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Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions

Bianca Turini, Sedighe Salimian, Matteo Carrega, Federico Paolucci, Valentina Zannier, Lucia Sorba, Stefan Heun

arXiv:2410.14469 · DOI 10.1002/pssb.202400534 · 2024-10-18 · physica status solidi (b)

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Abstract

InSb nanoflags, due to their intrinsic spin-orbit interactions, are an interesting platform in the study of planar Josephson junctions. Ballistic transport, combined with high transparency of the superconductor/semiconductor interfaces, was reported to lead to interesting phenomena such as the Josephson diode effect. The versatility offered by the planar geometry can be exploited to manipulate both carrier concentration and spin-orbit strength by electrical means. Here we present experimental results on InSb nanoflag-based Josephson junctions fabricated with side-gates placed in close proximity to the junction. We show that side-gates can efficiently modulate the current through the junction, both in the dissipative and in the dissipation-less regimes, similarly to what obtained with a conventional back-gate. Furthermore, the side-gates can be used to influence the Fraunhofer interference pattern induced by the presence of an external out-of-plane magnetic field.

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Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown