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Universal Scaling Behavior of Transport Properties in Non-Magnetic RuO$_{2}$

Xin Peng, Zhihao Liu, Shengnan Zhang, Yi Zhou, Yuran Sun, Yahui Su, Chunxiang Wu, Tingyu Zhou, Le Liu, Yazhou Li, Hangdong Wang, Jinhu Yang, Bin Chen, Yuke Li, Chuanying Xi, Jianhua Du, Zhiwei Jiao, Quansheng Wu, Minghu Fang

arXiv:2412.12258 · DOI 10.1038/s43246-025-00905-0 · 2024-12-16

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Abstract

As a prototypical altermagnet, RuO$_{2}$ has been subject to many controversial reports regarding its magnetic ground state and the existence of crystal Hall effects. We obtained high-quality RuO$_{2}$ single crystal with a residual resistivity ratio (RRR = 152), and carefully measured its magnetization, longitudinal resistivity ($ρ_{xx}$) and Hall resistivity ($ρ_{yx}$) up to 35 T magnetic field. We also calculated its electronic band, Fermi surface, and conducted numerical simulations for its transport properties. It was found that no magnetic transition occurs below 400 K, and that all the transport properties are consistent with the numerical simulations results, indicating that the magnetotransport properties originate from the intrinsic electronic structures and are dominated by the Lorentz force. Particularly, no crystal Hall effects were observed in our RuO$_{2}$ samples and both magnetoresistance and Hall resistivity follow scaling behavior. These results demonstrate that RuO$_{2}$ is a typical semimetal, rather than an altermagnet.

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