Development of High-Quality $α$-Ta Film at Room Temperature via Seed Layer Engineering

Abstract

The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $α$-Ta (alpha-phase tantalum) thin films has gained attention over conventional superconductors like Nb and Al due to their high-density native oxide ($Ta_2O_5$), which offers excellent chemical resistance, superior dielectric properties, and mechanical robustness. The growth of $α$-Ta thin films can be achieved through high-temperature/cryogenic growth, ultra-thin seed layers, or thick films (>300 nm). While high-temperature deposition produces high-quality films, it can cause thermal stress, silicide formation at the interface, and defects due to substrate-film mismatch. Room-temperature deposition minimizes these issues, benefiting heat-sensitive substrates and device fabrication. Low-temperature growth using amorphous (defective) seed layers such as TaN and TiN has shown promise for phase stabilization. However, nitrogen gas, used as a source of metallic nitride, can introduce defects and lead to the formation of amorphous seed layers. This study explores using crystalline seed layers to optimize $α$-Ta thin films, demonstrating improved film quality, including reduced surface roughness, enhanced phase orientation, and higher transition temperatures compared to amorphous seed layers like metal nitrides. These advancements could interest the superconducting materials community for fabricating high-quality quantum devices.

Similar papers