Electronic transport properties of titanium nitride grown by molecular beam epitaxy

Kosuke Takiguchi; Yoshiharu Krockenberger; Tom Ichibha; Kenta Hongo; Ryo Maezono; Yoshitaka Taniyasu; Hideki Yamamoto

Electronic transport properties of titanium nitride grown by molecular beam epitaxy

Kosuke Takiguchi, Yoshiharu Krockenberger, Tom Ichibha, Kenta Hongo, Ryo Maezono, Yoshitaka Taniyasu, Hideki Yamamoto

arXiv:2504.11065 · 2025-04-15

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Abstract

This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline quality, as reflected in both RRR values and lattice parameter variations. Characterization of superconductivity yielded a Ginzburg-Landau coherence length of 60.4 $\pm$ 0.6 nm, significantly higher than typical sputtered films, suggesting improved superconducting coherence. First-principles calculations, in conjunction with experimental data, provided detailed insights into the electronic structure and transport properties of the TiN films. Temperature-dependent Hall coefficient measurements further revealed the influence of anisotropic scattering mechanisms. These findings establish a promising route for the development of nitride-based superconducting materials for advanced quantum computing technologies.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	5.6	Pressure not reported	unknown
TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	5.3	Pressure not reported	zero_resistance