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Superinsulating behavior in granular Pb film on gated few-layer MoS$_2$

Suraina Gupta, Santu Prasad Jana, Pawan Kumar Gupta, Anjan K. Gupta

arXiv:2505.17515 · 2025-05-23

T1theoretical

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Abstract

We report a super-insulating behavior, in a device having granular Pb film on back-gated few-layer $\mathrm{MoS_2}$, below an onset temperature same as the critical temperature $T_{\rm C}\approx7$ K of bulk Pb. Below $T_{\rm C}$, the current-voltage characteristics exhibit a threshold voltage marking a crossover between the low-bias insulating and the high-bias normal-resistance states, consistent with the known super-insulating state behavior. A temperature dependent critical magnetic field is also found above which the insulating behavior is suppressed. The threshold voltage is found to vary with the gate-voltage but the critical field remains unchanged. With reducing temperature, the sample conductance saturates to a finite value, which depends on magnetic field and gate-voltage. This saturation behavior is found to be inconsistent with the charge-BKT and the thermal activation models but it can be fitted well to a combination of thermal activation and quantum fluctuations.

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FormulaReported Tc (K)Pressure (GPa)Type
Pb

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7Pressure not reportedonset

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