THz electrodynamics and superconducting energy scales of ZrN thin films
Ozan Saritas, Frederik Bolle, Yayi Lin, Martin Dressel, Roman Potjan, Marcus Wislicenus, Andre Reck, Marc Scheffler
arXiv:2509.17272 · DOI 10.1063/5.0299019 · 2025-09-21 · Applied Physics Letters
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Abstract
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm, and their critical temperatures Tc are between 5 and 7.3 K. We probe the real and imaginary parts of the complex dynamical conductivity sigma in the frequency range from 100 - 540 GHz (0.4 - 2.2 meV) and as a function of temperature. The experiments provide direct access to the low-energy electrodynamics and key materials parameters such as superconducting energy gap and superfluid density. Our findings indicate that ZrN is a weakly coupled BCS-type superconductor with a gap-to-Tc ratio of approximately 3.4 in the thick film limit. For thinner films, this coupling ratio increases up to 4.0, departing from the BCS prediction. The results establish large-scale ZrN thin films as promising material for high-frequency superconducting applications.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| ZrN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6.15 | Pressure not reported | unknown |
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