Low-temperature electron dephasing rates indicate magnetic disorder in superconducting TiN films

A. I. Lomakin; E. M. Baeva; N. A. Titova; A. V. Semenov; A. V. Lubenchenko; M. A. Kirsanova; S. A. Evlashin; S. Saha; S. Bogdanov; A. I. Kolbatova; G. N. Goltsman

doi:10.1063/5.0286394

Low-temperature electron dephasing rates indicate magnetic disorder in superconducting TiN films

A. I. Lomakin, E. M. Baeva, N. A. Titova, A. V. Semenov, A. V. Lubenchenko, M. A. Kirsanova, S. A. Evlashin, S. Saha, S. Bogdanov, A. I. Kolbatova, G. N. Goltsman

arXiv:2510.20576 · DOI 10.1063/5.0286394 · 2025-10-23 · Applied Physics Letters

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Abstract

We investigate electron transport and phase-breaking processes in thin titanium nitride (TiN) films of epitaxial quality. Previous studies show that a minute surface magnetic disorder significantly reduces the critical temperature ($T_\mathrm{c}$) and broadens the superconducting transition as the film thickness and device size decrease. We measure electron dephasing rates via magnetoresistance from $T_\mathrm{c}$ to $\sim 4T_\mathrm{c}$ in various-thickness TiN films. Electron dephasing occurs on the picosecond timescale and is nearly independent of temperature, differing from the expected inelastic scattering due to the electron-phonon and electron-electron interactions near $T_\mathrm{c}$, which occur over a nanosecond timescale. We propose spin-flip scattering as a possible additional phase-breaking mechanism. The significant increase in the dephasing rate for the thinnest film indicates that magnetic disorder resides near the surface of naturally oxidized films. Our research suggests that magnetic disorder may be a significant contributor to RF dissipation in superconducting devices based on TiN.