KTaO3-Based Supercurrent Diode

Muqing Yu; Jieun Kim; Ahmed Omran; Zhuan Li; Jiangfeng Yang; Sayanwita Biswas; Chang-Beom Eom; David Pekker; Patrick Irvin; Jeremy Levy

doi:10.1021/acs.nanolett.5c05590

KTaO3-Based Supercurrent Diode

Muqing Yu, Jieun Kim, Ahmed Omran, Zhuan Li, Jiangfeng Yang, Sayanwita Biswas, Chang-Beom Eom, David Pekker, Patrick Irvin, Jeremy Levy

arXiv:2511.04618 · DOI 10.1021/acs.nanolett.5c05590 · 2025-11-06 · Nano Letters

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Abstract

The supercurrent diode effect (SDE), characterized by nonreciprocal critical currents, represents a promising building block for future dissipationless electronics and quantum circuits. Realizing SDE requires breaking both time-reversal and inversion symmetry in the device. Here we use conductive atomic force microscopy (c-AFM) lithography to pattern reconfigurable superconducting weak links (WLs) at the LaAlO3/KTaO3 (LAO/KTO) interface. By deliberately engineering the WL geometry at the nanoscale, we realize SDE in these devices in the presence of modest out-of-plane magnetic fields. The SDE polarity can be reversed by simply changing the WL position, and the rectification efficiency reaches up to 13% under optimal magnetic field conditions. Time-dependent Ginzburg-Landau simulations reveal that the observed SDE originates from asymmetric vortex motion in the inversion-symmetry-breaking device geometry. This demonstration of SDE in the LAO/KTO system establishes a versatile platform for investigating and engineering vortex dynamics, forming the basis for engineered quantum circuit elements.