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Dissipation due to Bulk Localized Low-Energy Modes in Strongly Disordered Superconductors

Anton V. Khvalyuk, Mikhail V. Feigel'man

arXiv:2512.11636 · DOI 10.1103/923y-49z5 · 2026-06-24

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Abstract

Strongly disordered superconductors (SDSCs) are widely used in qubits, microwave resonators, photon detectors, and other superconducting quantum devices. In SDSC-based devices, coherence times are limited by low-temperature microwave dissipation in the material. However, the standard Mattis-Bardeen theory fails in SDSCs because their single-particle spectrum exhibits a hard pseudogap $Δ_{P}$ both below and above the transition temperature $T_{c}$. We develop a novel microscopic theory of the dependence of \emph{ac }dissipation in such systems on temperature $T$ and frequency $ω$. We analyze the resonator quality factor $Q(ω,T)$ in the practically relevant range $\hbarω,\,T\llΔ\leqΔ_{P}$, where $Δ$ is the typical superconducting order parameter, distinct from $Δ_{P}$. We show that low-$ω$ dissipation is dominated by a new type of bulk localized collective modes arising from spatial inhomogeneity of the superconducting state. Consequently, $Q(ω)$ decreases strongly with $ω$ and exhibits two-level-system-like growth with $T$ for $T\ll T_{c}$. Our theory provides a microscopic understanding of existing and future experiments on thin films of $\mathrm{InO}_{x}$, TiN, NbN, and similar SDSCs, and is phenomenologically relevant to granular aluminum films. The results suggest strategies to mitigate intrinsic microwave losses in SDSC-based quantum devices.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
InOx

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—Pressure not reportedunknown
TiN

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—Pressure not reportedunknown
NbN

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—Pressure not reportedunknown
Al

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—Pressure not reportedunknown

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