Tunable anharmonicity in Sn-InAs nanowire transmons beyond the short junction limit

Amrita Purkayastha; Amritesh Sharma; Param J. Patel; An-Hsi Chen; Connor P. Dempsey; Shreyas Asodekar; Subhayan Sinha; Maxime Tomasian; Mihir Pendharkar; Christopher J. Palmstrøm; Moïra Hocevar; Kun Zuo; Michael Hatridge; Sergey M. Frolov

Tunable anharmonicity in Sn-InAs nanowire transmons beyond the short junction limit

Amrita Purkayastha, Amritesh Sharma, Param J. Patel, An-Hsi Chen, Connor P. Dempsey, Shreyas Asodekar, Subhayan Sinha, Maxime Tomasian, Mihir Pendharkar, Christopher J. Palmstrøm, Moïra Hocevar, Kun Zuo, Michael Hatridge, Sergey M. Frolov

arXiv:2603.26895 · 2026-03-27

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Abstract

The anharmonicity of a transmon qubit, defined as the difference in energy level spacing, is a key design parameter. In transmons built from hybrid superconductor-semiconductor Josephson elements, the anharmonicity is tunable with gate voltages that control both the Josephson energy and the weak link transparency. In Sn-InAs nanowire transmons, we use two-tone microwave spectroscopy to extract anharmonicity ranging in absolute value from the transmon charging energy $E_c$ to values smaller than $E_c/10$. This behavior contrasts with the predictions of the multi-channel short-junction model, which sets a lower limit on anharmonicity at $E_c/4$. Coherent operation of the qubit is still possible at the point of the lowest anharmonicity. These findings demonstrate the potential of quantum circuits that benefit from widely electrically tunable anharmonicity.