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Freestanding GdBa2Cu3O7 Thin Films via Optimized Buffer Layer Design: Preserving Superconducting Properties

Kazumasa Iida, Kai Walter, Takafumi Hatano, Kose Morinaga, Manuela Erbe, Hongye Gao, Satoshi Hata, Jens Hänisch

arXiv:2605.10703 · DOI 10.1021/acsaelm.6c00542 · 2026-05-11

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Abstract

Freestanding GdBa2Cu3O7 (GdBCO) superconducting thin films were fabricated using a water-soluble Sr3Al2O6 (SAO) sacrificial layer in combination with thermal release tape. An amorphous Al2O3 capping layer was introduced to suppress crack formation during the lift-off process. The influence of buffer-layer design inserted between the GdBCO and SAO layers was systematically investigated with respect to structural integrity and superconducting properties after lift-off. A LaAlO3/SrTiO3 bilayer buffer was found to be essential for maintaining epitaxial growth and a superconducting transition temperature (Tc) of approximately 92 K after lift-off, comparable to that of the as-grown films. In contrast, a reversed SrTiO3/LaAlO3 bilayer and single-layer buffer structures led to a suppression of Tc, highlighting the critical role of stacking sequence. These results demonstrate that optimization of the buffer-layer design is a key factor for realizing high-quality freestanding GdBCO films while maintaining their superconducting characteristics.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
GdBa2Cu3O7

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92Pressure not reportedunknown
GdBa2Cu3O7

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

90Pressure not reportedzero_resistance
YBa2Cu3O7-δ

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—Pressure not reportedunknown
Pr1.85Ce0.15CuO4-δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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