Pressure-induced Structural Phase Transition, Metallization, and Superconductivity in layered metalloid dichalcogenide 1T-SiTe$_2$
Ying-Jie Zhang, Heng Xu, Zhe-Ning Xiang, Zong-Hui Wu, Qing Li, Hai-Hu Wen
arXiv:2607.07569 · 2026-07-08
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Abstract
Layered transition-metal dichalcogenides (TMDs) have attracted considerable attention as promising platforms for exploring emergent physics and potential device applications. In contrast, metalloid-based dichalcogenide counterparts remain largely underexplored. Here, we report the pressure-induced structural phase transition, metallization, and superconductivity in the layered metalloid dichalcogenide 1T-SiTe$_2$. At ambient pressure, 1T-SiTe$_2$ crystallizes in a trigonal crystal structure (space group: $P\bar{3}m1$) and exhibits intrinsic semiconducting transport characteristics. Upon pressurization, in concomitant with the suppression of semiconducting behavior in resistance, superconductivity emerges at around 6.7 GPa. The superconducting transition temperature (T$_c$) rises continuously with increasing pressure and finally saturates at approximately 5.5 K for pressures above 30 GPa. During the compression, 1T-SiTe$_2$ experiences three structural phase transitions, and the phase transition pressures are highly consistent with the anomalous transport responses observed experimentally, indicating that the changes of transport behavior of 1T-SiTe$_2$ under pressure are structurally-driven. Our work extends TMD superconductors into the realm of metalloid systems and provides a new platform for exploring novel physics in quasi two-dimensional materials without transition-metal elements.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| SiTe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.5 | 30 GPa | onset |
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