Superconducting proximity effect in a strongly correlated charge-transfer insulator
Mengya Ren, Yaoyao Chen, Fudi Zhou, Can Zhang, Zhaoteng Dong, Lili Zhou, Quanzhen Zhang, Huixia Yang, Xiaolong Xu, Yuanxiao Ma, Yu Zhang, Yeliang Wang
arXiv:2607.13873 · 2026-07-15
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Abstract
Proximity-induced superconductivity in strongly correlated insulators provides a versatile route for engineering quantum states of matter and artificial systems with tailored functionalities. However, microscopic interplay between superconductivity and correlated insulating states remains poorly understood. Here we use ultralow-temperature scanning tunnelling microscopy (STM) to systemically investigate superconducting proximity effects in a charge-transfer insulator. Via STM tip manipulation, atomically sharp lateral junctions composed of superconducting monolayer H-NbSe2 and charge-transfer insulating monolayer T-NbSe2 are constructed, enabling direct access to tunable coupling regimes. In the weak-coupling regime, there is a robust proximity-induced superconducting gap in T-NbSe2, with a reduced gap value relative to that of H-NbSe2. Upon entering the strong-coupling regime, T-NbSe2 exhibits a superconducting gap comparable to that of H-NbSe2, accompanied by pronounced particle-hole-symmetric in-gap bound states, consistent with Yu-Shiba-Rusinov-like excitations. These findings establish monolayer H/T-NbSe2 lateral junctions as a model platform for elucidating superconducting proximity effects in strongly correlated charge-transfer insulators.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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