A Voltage-Controlled Josephson Frequency Comb
Giorgio De Simoni, Francesco Giazotto
arXiv:2607.17992 · 2026-07-20
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Abstract
Microwave frequency combs constitute promising resources for quantum technologies, cryogenic electronics, and multiplexed sensing architectures. In this work, we propose a frequency-comb generator based on a Josephson field-effect transistor operated in a relaxation-oscillation regime. The device comprises a gate-tunable ballistic superconductor-semiconductor-superconductor junction embedded in a resistively shunted circuit, in which electrostatic control of the carrier density enables in situ tuning of both the critical current and the Josephson inductance. Time-domain circuit simulations indicate that the resulting oscillator produces coherent voltage pulses whose Fourier spectrum forms a microwave frequency comb. In contrast to conventional Josephson-based comb architectures, the proposed platform provides direct electrical control of the comb spacing, emission frequencies, and modal power distribution via a gate electrode. For a representative Al/InAs implementation, we demonstrate continuous frequency coverage in the technologically relevant 1-10 GHz range. Furthermore, the concept is shown to be compatible with higher-$T_c$ superconductors, underscoring its potential as a compact and scalable microwave source for cryogenic quantum information and sensing applications.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al/InAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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