Pressure-induced Superconductivity in Thermoelectric Semiconductor Mg3Sb2
Cuiying Pei, Yasong Wu, Airan Li, Juefei Wu, Qi Wang, Yifan Zhu, Yi Zhao, Lingling Gao, Changhua Li, Weizheng Cao, Shihao Zhu, Mingxin Zhang, Yulin Chen, Chenguang Fu, Tiejun Zhu, Jiong Yang, Yanpeng Qi
arXiv:2608.03058 · DOI 10.1021/jacs.6c06354 · 2026-08-04
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Abstract
The intrinsic electronic structures of narrow bandgap thermoelectric (TE) materials serve as a platform for the investigation of coupling effects of quasi-particles under high pressure, enabling the exploration of emerging electronic and phonon transport, superconductivity, and topological transition. Here, we report the discovery of pressure-induced superconductivity in the TE semiconductor Mg3Sb2. Upon the increased pressure, the metallization occurs at 8.7 GPa, followed by a superconducting transition concomitant with a carrier-type crossover from p- to n-type. This phenomenon arises from a pressure-induced structural phase transition from the semiconducting P-3m1 to the metallic C2/m-I phase. The superconducting critical temperature (Tc) exhibits a dome-shaped pressure dependence, peaking at 3.3 K at 12.6 GPa. Combined theoretical calculations, high-pressure Raman spectroscopy, and X-ray diffraction (XRD) measurements reveal an additional structural transition above 20 GPa, yielding a distinct C2/m-II phase. Our findings establish the high-pressure phase diagram of Mg3Sb2, elucidate its pressure-dependent electronic properties, and provide valuable insights for future investigations of TE materials under high pressure.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Mg3Sb2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.3 | 12.6 GPa | onset |
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