Disorder-tuned crossing of monopole and conventional pairing instabilities in multi-Weyl semimetals
Enrique Muñoz, Rodrigo Soto-Garrido
arXiv:2608.24587 · 2026-08-25
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Abstract
We study how non-magnetic impurity scattering affects the emergence and possible coexistence of pairing instabilities in a two-node multi-Weyl semimetal. Within an explicitly specified projected impurity kernel---valley diagonal and momentum independent across each Fermi pocket, the leading behaviour of non-magnetic disorder in the small-pocket window $q^{\max}_{\rm intra}ξ_{\rm dis}\ll1\ll|2\mathbf Q|ξ_{\rm dis}$, treated at leading order in Born and Abrikosov--Gor'kov theory---quenched disorder tunes the leading pairing instability from a topologically nontrivial monopole channel to a conventional ($s$-wave) one, extending our earlier clean-system analysis into the disordered regime. A Born self-energy calculation in the chiral band basis then gives: (i) a band-isotropic conventional channel that is Anderson protected against intra-node scalar disorder ($η_s=1$), introduced phenomenologically at the projected-band level; solving the competition for arbitrary $η_s$ yields the crossing criterion $(1-η_s)/(1-η_m)<T_{c0}^{(s)}/T_{c0}^{(m)}$, so the mechanism tolerates substantial loss of conventional-channel protection; and (ii) a rank-one monopole sector fixing $f_m$ as the exact eigenfunction with $η_m(J)=1/(J+2)$, exact given that kernel. The crossing location in $Γ_N/T_{c0}^{(m)}$ is set by $η_m(J)$, $η_s$, and $r=T_{c0}^{(s)}/T_{c0}^{(m)}$. From the clean projected BdG Hamiltonian the pure monopole nodes carry Berry charge $\pm J$, distinct from the gapped conventional solution; the clean nodal thermodynamics is charge-dependent, $N_{\rm SC}(E)\propto E^{2/J}$ and $C\propto T^{1+2/J}$, and the residual density of states shows a threshold only for $J=1$. The crossing lies in the moderately metallic regime, $μ/Γ_N\simeq11$--$14$ for the illustrative $T_{c0}^{(m)}/μ=0.133$ used in the figures.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TaAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| HgCr2Se4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| SrSi2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| NdAlSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| PtBi2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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