Critical exponents at the superconductor-insulator transition in dirty-boson systems
Igor F. Herbut
arXiv:cond-mat/0001040 · DOI 10.1103/PhysRevB.61.14723 · 2000-01-05 · Physical Review B
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Abstract
I obtain the inverse of the correlation length exponent at the superfluid-Bose glass quantum critical point as a series in small parameter $\sqrt{d-1}$, with d being the dimensionality of the system, and compute the first two terms using a novel field-theoretic technique. For d=2 I find $ν_s = 0.81$ and $ν_c = 1.03$, for short-range and Coulomb interactions between bosons, respectively. When combined with the exact values of the dynamical critical exponents $z_s = d$ and $z_c = 1$, these results are in quantitative agreement with the experiments on onset of superfluidity in $^4 He$ in porous glasses, and on superconductor-insulator transition in homogeneous metallic films, in support of the dirty-boson theory fot the latter. Higher-order calculation of the exponents and of the universal conductivity is discussed.
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