Scaling analysis of the magnetic-field-tuned quantum transition in superconducting amorphous In-O films
V. F. Gantmakher, M. V. Golubkov, V. T. Dolgopolov, G. E. Tsydynzhapov, A. A. Shashkin
arXiv:cond-mat/0002065 · DOI 10.1134/1.568304 · 2000-02-04
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Abstract
We have studied the magnetic-field-tuned superconductor-insulator quantum transition (SIT) in amorphous In-O films with different oxygen content and, hence, different electron density. While for states of the film near the zero-field SIT the two-dimensional scaling behaviour is confirmed, for deeper states in the superconducting phase the SIT scenario changes: in addition to the scaling function that describes the conductivity of fluctuation-induced Cooper pairs, there emerges a temperature-dependent contribution to the film resistance. This contribution can originate from the conductivity of normal electrons.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| In-O Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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