Ballistic reflection at a side-gate in a superconductor-semiconductor-superconductor structure
G. Bastian, H. Takayanagi
arXiv:cond-mat/0005435 · DOI 10.1016/S0921-4534(00)01729-9 · 2000-05-25 · Physica C-superconductivity and Its Applications
Active bibliographic source — not scientific approval
Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.
Abstract
We have fabricated a sub-micron-sized structure consisting of an InAs-based 2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport between the non-oppositely superconducting contacts can be controlled by the voltage applied to the gate. This new kind of tuneable junction can be used for applications and allows several fundamental questions related to the transport mechanism to be studied. First results of experiments carried out in this respect are presented.
Similar papers
Controlling Josephson transport by manipulation of Andreev levels in ballistic mesoscopic junctions
similarity 0.89Goran Wendin et al. · 1998 · arXiv:cond-mat/9812092
Source status unknown — claims are unverified
Ballistic Andreev interferometers
similarity 0.89Régis Mélin et al.
Source status unknown — claims are unverified
Angle dependence of Andreev scattering at semiconductor–superconductor interfaces
similarity 0.89Niels Asger Mortensen et al.
Source status unknown — claims are unverified
Ballistic superconductivity in semiconductor nanowires
similarity 0.88Hao Zhang et al. · 2017 · arXiv:1707.03024
Source status unknown — claims are unverified
Resonant subgap current transport in Josephson field effect transistor
similarity 0.87Bezuglyi, E. V. et al. · 2017 · arXiv:1611.04390
Source status unknown — claims are unverified
Andreev transport in two-dimensional normal-superconducting systems in strong magnetic fields
similarity 0.87I. M. Khaymovich et al. · 2010 · arXiv:1004.3648
Source status unknown — claims are unverified