Epitaxial MgB2 superconducting thin films with a transition temperature of 39 Kelvin
W. N. Kang, Hyeong-Jin Kim, Eun-Mi Choi, C. U. Jung, Sung-Ik Lee
arXiv:cond-mat/0103179 · DOI 10.1126/science.1060822 · 2001-03-08 · Science
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Abstract
We report the growth of high-quality epitaxial MgB2 thin films on (1102) Al2O3 and (001) SrTiO3 substrates by using a pulsed laser deposition technique. The thin films grown on Al2O3 substrates show a Tc of 39 K with a sharp transition width of ~ 0.7 K. The critical current density in zero field is ~ 8 x 10^6 A/cm^2 at 5 K, suggesting that this compound has great potential for industrial applications. Also, Al2O3 is a very promising substrate in terms of superconducting device applications because of its high thermal conductivity and small dielectric constant. For the films deposited on Al2O3, X-ray diffraction patterns indicate a c-axis-oriented crystal structure perpendicular to the substrate surface whereas the films deposited on SrTiO3 show {101} plane as the preferred orientation.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39 | Pressure not reported | onset |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 37.6 | Pressure not reported | zero_resistance |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 37.5 | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39 | Pressure not reported | unknown |
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