Hall-conductivity sign change and fluctuations in amorphous Nb$_{x}$Ge$_{1-x}$ films
Nobuhito Kokubo, Jan Aarts, Peter H. Kes
arXiv:cond-mat/0103201 · DOI 10.1103/PhysRevB.64.014507 · 2001-03-08 · Physical Review B
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Abstract
The sign change in the Hall conductivity has been studied in thin amorphous Nb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above to below the mean-field transition field $H_{c2}$) with increasing film thickness. This effect can be understood in terms of a competition between a positive normal and a negative fluctuation contribution to the Hall conductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb0.7Ge0.3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3 | Pressure unresolved | unknown |
| Nb0.7Ge0.3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.77 | Pressure unresolved | unknown |
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