Mobility of the Doped Holes and the Antiferromagnetic Correlations in Underdoped High-T_c Cuprates
Yoichi Ando, A. N. Lavrov, Seiki Komiya, Kouji Segawa, X. F. Sun
arXiv:cond-mat/0104163 · DOI 10.1103/PhysRevLett.87.017001 · 2001-04-10 · Physical review letters
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Abstract
The emergence and the evolution of the metallic charge transport in the La_{2-x}Sr_{x}CuO_{4} system from lightly- to optimally-doped samples (x = 0.01 - 0.17) are studied. We demonstrate that in high-quality single crystals the in-plane resistivity shows a metallic behavior for ALL values of x at moderate temperatures and that the hole mobility at 300 K changes only by a factor of 3 from x = 0.01 to 0.17, where its x-dependence is found to be intriguingly similar to that of the inverse antiferromagnetic correlation length. We discuss an incoherent-metal picture and a charged-stripe scenario as candidates to account for these peculiar features.
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