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Localization by disorder in the infrared conductivity of (Y,Pr)Ba2Cu3O7 films

R. P. S. M. Lobo, E. Ya. Sherman, D. Racah, Y. Dagan, N. Bontemps

arXiv:cond-mat/0106555 · DOI 10.1103/PhysRevB.65.104509 · 2001-06-27 · Physical Review B

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Abstract

The ab-plane reflectivity of (Y{1-x}Prx)Ba2Cu3O7 thin films was measured in the 30-30000 cm-1 range for samples with x = 0 (Tc = 90 K), x = 0.4 (Tc = 35 K) and x = 0.5 (Tc = 19 K) as a function of temperature in the normal state. The effective charge density obtained from the integrated spectral weight decreases with increasing x. The variation is consistent with the higher dc resistivity for x = 0.4, but is one order of magnitude smaller than what would be expected for x = 0.5. In the latter sample, the conductivity is dominated at all temperatures by a large localization peak. Its magnitude increases as the temperature decreases. We relate this peak to the dc resistivity enhancement. A simple localization-by-disorder model accounts for the optical conductivity of the x = 0.5 sample.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
YBa2Cu3O7

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90Pressure not reportedunknown
(Y0.6Pr0.4)Ba2Cu3O7

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

35Pressure not reportedunknown
(Y0.5Pr0.5)Ba2Cu3O7

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19Pressure not reportedunknown

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