Correlation between the residual resistance ratio and magnetoresistance in MgB2
X. H. Chen, Y. S. Wang, Y. Y. Xue, R. L. Meng, Y. Q. Wang, C. W. Chu
arXiv:cond-mat/0107154 · DOI 10.1103/PhysRevB.65.024502 · 2001-07-06 · Physical Review B
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Abstract
The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB2 with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal state resistivity and residual resistance ratios although their superconducting transition temperatures are nearly the same, except for the thin-film sample. The correlation between the residual resistance ratio (RRR) and the power law dependence of the low temperature resistivity, rho vs. T^c, indicates that the electron-phonon interaction is important. It is found that the magnetoresistance (MR) in the normal state scales well with the RRR, a0(MR) proportional to (RRR)^2.2 +/- 0.1 at 50 K. This accounts for the large difference in magnetoresistance reported by various groups, due to different defect scatterings in the samples.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 38.8 | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 25 | Pressure not reported | unknown |
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