Excitons in Mott insulators

P. Wrobel; R. Eder

doi:10.1103/PhysRevB.66.035111

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Excitons in Mott insulators

P. Wrobel, R. Eder

arXiv:cond-mat/0110573 · DOI 10.1103/PhysRevB.66.035111 · 2001-10-27 · Physical Review B

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Abstract

Motivated by recent Raman and resonant inelastic X-ray scattering experiments performed for Mott insulators, which suggest formation of excitons in these systems, we present a theory of exciton formation in the upper Hubbard band. The analysis based on the spin polaron approach is performed in the framework of an effective t-J model for the subspace of states with one doubly occupied site. Our results confirm the existence of excitons and bear qualitative resemblance to experimental data despite some simplifications in our approach. They prove that the basic underlying mechanismof exciton formation is the same as that which gives rise to binding of holes in weakly doped antiferromagnets.