Subgap anomaly and above-energy-gap structure in chains of diffusive SNS junctions

Tatyana. I. Baturina; D. R. Islamov; Z. D. Kvon

doi:10.1134/1.1485261

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Subgap anomaly and above-energy-gap structure in chains of diffusive SNS junctions

Tatyana. I. Baturina, D. R. Islamov, Z. D. Kvon

arXiv:cond-mat/0202467 · DOI 10.1134/1.1485261 · 2002-02-26 · Journal of Experimental and Theoretical Physics Letters

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Abstract

We present the results of low-temperature transport measurements on chains of superconductor--normal-constriction--superconductor (SNS) junctions fabricated on the basis of superconducting PtSi film. A comparative study of the properties of the chains, consisting of 3 and 20 SNS junctions in series, and single SNS junctions reveals essential distinctions in the behavior of the current-voltage characteristics of the systems: (i) the gradual decrease of the effective suppression voltage for the excess conductivity observed at zero bias as the quantity of the SNS junctions increases, (ii) a rich fine structure on the dependences dV/dI-V at dc bias voltages higher than the superconducting gap and corresponding to some multiples of 2Δ/e. A model to explain this above-energy-gap structure based on energy relaxation of electron via Cooper-pair-breaking in superconducting island connecting normal metal electrods is proposed.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
PtSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.56	Pressure not reported	unknown