Doping Dependence of Anisotropic Resistivities in Trilayered Superconductor Bi2Sr2Ca2Cu3O10+delta (Bi-2223)
Takenori Fujii, Ichiro Terasaki, Takao Watanabe, Azusa Matsuda
arXiv:cond-mat/0205121 · DOI 10.1103/PhysRevB.66.024507 · 2002-05-07 · Physical Review B
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Abstract
The doping dependence of the themopower, in-plane resistivity rho_ab(T), out-of-plane resistivity rho_c(T), and susceptibility has been systematically measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+delta. We found that the transition temperature Tc and pseudogap formation temperature T_rho_c*, below which rho_c shows a typical upturn, do not change from their optimum values in the "overdoped" region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk $T_c$ is determined by the always underdoped inner plane, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2Ca2Cu3O10+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 108 | Pressure not reported | onset |
| Bi2Sr2Ca2Cu3O10+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 110 | Pressure not reported | zero_resistance |
| Bi2Sr2CaCu2O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 89 | Pressure not reported | onset |
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